PROCESS CHEMICALS AND GASES Rohm & Haas Improves Barrier Slurries.

A novel series of nonacidic barrier slurries optimized for chemical mechanical planarization (CMP) of 90 nm low-k devices has been introduced by dint of Rohm and Haas Electronic Materials. The LK series barrier slurries accommodate a wide range of integration schemes and present improved defectivity performance and flexibility, says the company.

Diffusion barriers are critical to the felicitous integration and reliability of low-k dielectrics in cent metallization. The barriers, which are usually Ta/TaN, are deposited upon top of low-k films